English: Cross-sectional transmission image of porous silicon (inverted). The pore has a cone-shaped shape. In the middle, the pore is filled with silicon carbide. Porous Si is a reliable buffer layer that reduces elastic stresses occurring at the SiC–Si interface and allows the influence of the mismatch of crystal lattice parameters on silicon carbidization processes to be minimized. It should also be noted that porous island-type SiC layers can, in turn, show promise as buffers during heteroepitaxy of materials on silicon substrates. 16500 times magnification. This work is devoted to climatic and ecological changes and cataclysms. In our new project "EcoNano", we want to draw attention to the fact that, despite the war, it is necessary to remember about ecology, health, conservation of resources and human capital. After all, these problems always exist. The synthesis of nanostructures was carried out at the Berdyansk State Pedagogical University, the authors are Yana Suchikova (Yana Sychikova) and Serhii Kovachov. At the time of submission of the image for the competition, the city of Berdyansk is under occupation, and the university is captured by the russian invaders. The image was made within the project “EcoNano”. The project is implemented with the support of the Sustainability Fund for Ukrainian Artists of the Artists at Risk Connection program of PEN America