English: The surface of single-crystal gallium arsenide after electrochemical etching in nitric acid solution. Electrochemical etching of GaAs in acid HNO3 solutions occurs according to the defect-dislocation mechanism, in which the primary microrelief of the surface is formed due to the etching of surface defects and the release of dislocations. The surface morphology of the GaAs sample shows the presence of steps, which are the result of the etching of the so-called "walls of dislocations". The etching hole has the shape of a rhombus, the faces of which coincide with the <111>A and <111>B directions. You can also see that the pore is etched in layers, forming steps. The microrelief on the surface resembles the form of Zmiiny Island, which became a symbol of the courage of the Ukrainian soldier and the insubordination of our people. We dedicate our Nanoart to Ukraine's struggle for its independence and our future victory. Due to the inseparability of science and art, we want to convey to the world the need to support our scientists, artists and all Ukrainians. The synthesis of nanostructures was carried out at the Berdyansk State Pedagogical University, the authors are Yana Suchikova (Yana Sychikova) and Serhii Kovachov. At the time of submission of the image for the competition, the city of Berdyansk is under occupation, and the university is captured by the russian invaders. The image was made within the project “Nanoart. New Symbolism of Science”. The project is implemented with the support of the Sustainability Fund for Ukrainian Artists of the Artists at Risk Connection program of PEN America